SEOUL, South Korea / RankWire.AI / – Samsung Electronics revealed its latest memory and storage approach for artificial intelligence systems at the 2026 OCP Global Summit. The event, held in San Jose, California from October 12 to 15, showcased Samsung’s plans to advance high-performance memory, CXL-based memory expansion, and next-generation SSDs. Additionally, Samsung announced a collaborative CXL demonstration with Advanced Micro Devices. The initiative aims to address memory bottlenecks that hinder the performance of larger AI workloads.
Samsung’s strategy centers on enhancing speed, expanding memory capacity, and improving data retention. The first pillar emphasizes high-performance memory, with the company presenting customized high-bandwidth memory and HBM5, its eighth-generation HBM. The second involves leveraging CXL to increase memory capacity beyond traditional server limits. The third focuses on data storage solutions through next-generation enterprise SSDs and advanced storage software. Samsung asserts that these three components work synergistically to boost overall AI system efficiency.
The company linked its strategy to the rising demand for memory driven by AI inference workloads, which produce larger data volumes requiring more memory to process. Current server designs often cap the memory accessible to each processor, but Samsung proposes CXL as a solution to overcome these restrictions without overhauling entire systems. The company also emphasized key-value cache optimization, enabling AI models to reuse data rather than recomputing it repeatedly.
Samsung and AMD Demonstrate CXL-Based Memory Expansion
At the summit, Samsung and AMD jointly showcased a CXL-enabled memory expansion solution that allows processors to share and scale memory resources flexibly across AI platforms. Samsung confirmed that this technology has been validated in real system environments. The two firms signed a memorandum of understanding in March 2026 to collaborate on next-generation AI memory and computing innovations. Additionally, AMD CEO Lisa Su visited South Korea on October 7 to discuss cooperation in memory and foundry services.
Samsung also displayed its CXL-based DRAM module, CMM-D, configured for memory pooling. This setup connects multiple CXL memory units into a shared pool accessible by different systems. Other exhibits included processing-in-memory technology, which performs some calculations within memory chips to reduce data transfer needs. Samsung showcased 2-nanometer gate-all-around wafers and Groq LPU wafers, with Nvidia’s Groq 3 LPX system also featured among its displays.
Early Access for Partners to Memory Validation Continues
During an executive session, Shim Ho-jun, Corporate Vice President and Head of Samsung’s Application Engineering Team, explained that increasing memory capacity and bandwidth is crucial as AI models expand and inference workloads grow. He added that Samsung is strengthening co-design and technical validation efforts with global partners from early development stages to ensure memory products meet customer system needs prior to commercialization.
Samsung’s MAX Lab supports this initiative by enabling clients to test memory and storage solutions under real AI workloads. This allows validation of technologies such as PIM and next-generation SSDs before market release. The company participated in the summit as a Diamond Sponsor of the Open Compute Project. This follows previous presentations at Nvidia GTC in March, COMPUTEX in June, and the Future of Memory and Storage conference in August, underscoring Samsung’s focus on expanding memory capacity as a key element of AI infrastructure performance.